US 11,899,293 B2
Electro optical devices fabricated using deep ultraviolet radiation
Mian Zhang, Cambridge, MA (US); and Kevin Luke, Cambridge, MA (US)
Assigned to HyperLight Corporation, Cambridge, MA (US)
Filed by HyperLight Corporation, Cambridge, MA (US)
Filed on May 11, 2020, as Appl. No. 16/871,658.
Application 16/871,658 is a continuation in part of application No. 16/785,206, filed on Feb. 7, 2020, granted, now 11,086,048.
Prior Publication US 2021/0247570 A1, Aug. 12, 2021
Int. Cl. G02F 1/03 (2006.01); G02F 1/07 (2006.01); G02B 6/13 (2006.01); G03F 7/00 (2006.01); G02F 1/05 (2006.01); G02B 6/12 (2006.01)
CPC G02F 1/03 (2013.01) [G02B 6/13 (2013.01); G02F 1/05 (2013.01); G03F 7/70008 (2013.01); G02B 2006/1204 (2013.01); G02B 2006/12045 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A device, comprising:
an optical device, at least a portion of the optical device including at least one ferroelectric nonlinear optical material, the at least the portion of the optical device being fabricated utilizing ultraviolet (UV) photolithography and including a sidewall;
wherein the sidewall is fabricated using the UV photolithography, a first etch and a second etch, the UV photolithography being used to form a mask for fabricating a hard mask from a hard mask layer, the first etch for removing a portion of the hard mask layer to form the hard mask, the second etch for removing a portion of the at least one ferroelectric nonlinear optical material to form the sidewall, the second etch being selected from a dry etch, a reactive ion etch (RIE), a plasma etch and a chemical etch, the second etch being different from the first etch such that the sidewall has a short range root mean square roughness of less than ten nanometers.