US 11,899,285 B2
Photothermal modification of high index dielectric structures
Xiaolong Zhu, Kgs. Lyngby (DK); Anders Kristensen, Frederiksberg (DK); and Niels Asger Mortensen, Kgs. Lyngby (DK)
Assigned to Danmarks Tekniske Universitet, Kgs. Lyngby (DK)
Appl. No. 16/470,782
Filed by Danmarks Tekniske Universitet, Kgs. Lyngby (DK)
PCT Filed Dec. 22, 2017, PCT No. PCT/EP2017/084557
§ 371(c)(1), (2) Date Jun. 18, 2019,
PCT Pub. No. WO2018/122208, PCT Pub. Date Jul. 5, 2018.
Claims priority of application No. 16207500 (EP), filed on Dec. 30, 2016.
Prior Publication US 2019/0339543 A1, Nov. 7, 2019
Int. Cl. G02C 7/02 (2006.01); G02C 7/04 (2006.01)
CPC G02C 7/022 (2013.01) [G02C 7/049 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A method for geometrically modifying high-index dielectric structures on a support structure, said method comprising:
a. providing a support structure,
b. providing a first plurality of high-index dielectric structures, said first plurality of high-index dielectric structures being supported by the support structure,
c. changing a geometry specifically of high-index dielectric structures within a second plurality of high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures,
wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures,
and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures,
wherein said support structure comprises a first plurality of topographical features comprising topographical pillars or topographical holes formed on a surface of the support structure,
and wherein the first plurality of high-index dielectric structures are given by:
a plurality of high-index dielectric structures on said topographical pillars or in said topographical holes,
and
a plurality of holes in a high-index dielectric film, wherein said holes correspond to said topographical features,
and wherein the relative permittivity at 532 nm of the first plurality of high-index dielectric structures is equal to or larger than 5.