US 11,899,082 B2
Silicon hall sensor with low offset and drift compensation coils
Keith Ryan Green, Prosper, TX (US); and Tony Ray Larson, Tucson, AZ (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Sep. 9, 2020, as Appl. No. 17/015,327.
Prior Publication US 2022/0075009 A1, Mar. 10, 2022
Int. Cl. G01R 33/07 (2006.01); H10N 52/80 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01)
CPC G01R 33/072 (2013.01) [H10N 52/101 (2023.02); H10N 52/80 (2023.02); H10N 52/01 (2023.02)] 25 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
first and second doped regions both having a first conductivity type formed in a semiconductor substrate having a second conductivity type;
a dielectric layer between the first and second doped regions and a surface plane of the semiconductor substrate;
first, second, third and fourth terminals connected to the first doped region, the first and third terminals defining a first conductive path through the first doped region and the second and fourth terminals defining a second conductive path through the first doped region, the second conductive path intersecting the first conductive path;
a first coil formed in an interconnect level over the first doped region, and a second coil formed in the interconnect level over the second doped region;
a well region having the second conductivity type laterally between the first doped region and the semiconductor substrate and bounding a perimeter of the first doped region; and
a control circuit configured to produce a current that when flowing produces:
a first magnetic moment by the first coil, the first magnetic moment having a normal component with a first direction with respect to the surface plane; and
a second magnetic moment by the second coil, the second magnetic moment having a normal component with a second opposite direction with respect to the surface plane.