US 11,898,266 B2
Method for growing gallium oxide single crystal by casting and semiconductor device containing gallium oxide single crystal
Ning Xia, Hangzhou (CN); Hui Zhang, Hangzhou (CN); Keke Ma, Hangzhou (CN); Yingying Liu, Hangzhou (CN); and Deren Yang, Hangzhou (CN)
Assigned to Hangzhou Garen Semiconductor Co., Ltd., Hangzhou (CN)
Filed by Hangzhou Garen Semiconductor Co., Ltd., Hangzhou (CN)
Filed on Jul. 13, 2022, as Appl. No. 17/812,186.
Claims priority of application No. 202210441289.5 (CN), filed on Apr. 26, 2022.
Prior Publication US 2023/0340689 A1, Oct. 26, 2023
Int. Cl. C30B 11/06 (2006.01); C30B 11/00 (2006.01); C30B 29/16 (2006.01)
CPC C30B 11/003 (2013.01) [C30B 11/06 (2013.01); C30B 29/16 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for growing a gallium oxide single crystal by casting, comprising the following steps:
1) Heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and
2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained, wherein the gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal, and
in step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of 2-10% is present in a growth atmosphere; and the growth atmosphere comprises an inert gas;
wherein:
a cooling rate of the first gradient is 10-20° C./h;
a cooling rate of the second gradient is 30-60° C./h;
the first temperature is 1,500-1,700° C.; and
the method does not use a single crystal seed.