US 11,898,249 B2
PECVD process
Nagarajan Rajagopalan, Santa Clara, CA (US); Xinhai Han, Santa Clara, CA (US); Michael Wenyoung Tsiang, Fremont, CA (US); Masaki Ogata, San Jose, CA (US); Zhijun Jiang, Sunnyvale, CA (US); Juan Carlos Rocha-Alvarez, San Carlos, CA (US); Thomas Nowak, Cupertino, CA (US); Jianhua Zhou, Campbell, CA (US); Ramprakash Sankarakrishnan, Santa Clara, CA (US); Amit Kumar Bansal, Milpitas, CA (US); Jeongmin Lee, San Ramon, CA (US); Todd Egan, Fremont, CA (US); Edward W. Budiarto, Fremont, CA (US); Dmitriy Panasyuk, Santa Clara, CA (US); Terrance Y. Lee, Oakland, CA (US); Jian J. Chen, Fremont, CA (US); Mohamad A. Ayoub, Los Gatos, CA (US); Heung Lak Park, San Jose, CA (US); Patrick Reilly, Pleasanton, CA (US); Shahid Shaikh, Santa Clara, CA (US); Bok Hoen Kim, Santa Clara, CA (US); Sergey Starik, Kiev (UA); and Ganesh Balasubramanian, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 13, 2023, as Appl. No. 18/108,989.
Application 18/108,989 is a continuation of application No. 17/011,853, filed on Sep. 3, 2020, granted, now 11,613,812.
Application 17/011,853 is a continuation of application No. 15/976,468, filed on May 10, 2018, granted, now 10,793,954, issued on Oct. 6, 2020.
Application 15/976,468 is a continuation of application No. 15/802,496, filed on Nov. 3, 2017, granted, now 10,060,032, issued on Aug. 28, 2018.
Application 15/802,496 is a continuation of application No. 15/278,455, filed on Sep. 28, 2016, granted, now 9,816,187, issued on Nov. 14, 2017.
Application 15/278,455 is a continuation of application No. 14/869,371, filed on Sep. 29, 2015, granted, now 9,458,537, issued on Oct. 4, 2016.
Application 14/869,371 is a continuation of application No. 14/056,203, filed on Oct. 17, 2013, granted, now 9,157,730, issued on Oct. 13, 2015.
Claims priority of provisional application 61/761,515, filed on Feb. 6, 2013.
Claims priority of provisional application 61/738,247, filed on Dec. 17, 2012.
Claims priority of provisional application 61/719,319, filed on Oct. 26, 2012.
Prior Publication US 2023/0193466 A1, Jun. 22, 2023
Int. Cl. C23C 16/52 (2006.01); G01B 11/06 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); C23C 16/509 (2006.01); G01N 21/55 (2014.01); G01N 21/65 (2006.01); H01L 21/00 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/505 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/458 (2013.01); C23C 16/4557 (2013.01); C23C 16/45565 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/505 (2013.01); C23C 16/509 (2013.01); C23C 16/5096 (2013.01); G01B 11/0625 (2013.01); G01B 11/0683 (2013.01); G01N 21/55 (2013.01); G01N 21/658 (2013.01); H01L 21/00 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/687 (2013.01); G01N 2201/1222 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor processing device, comprising:
a chamber having an internal volume defined by a side wall, a floor, and a lid;
a gas distributor having a plurality of gas flow openings formed therethrough; and
a substrate support disposed in the internal volume of the chamber, the substrate support comprising:
a first heating element disposed in the substrate support;
a second heating element disposed in the substrate support beneath the first heating element and extending radially outward beyond the first heating element; and
a thermocouple disposed in the substrate support beneath the second heating element.