US 11,898,244 B2
Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the same
Jooho Lee, Hwaseong-si (KR); Yongsung Kim, Suwon-si (KR); Sanghoon Song, Hwaseong-si (KR); Wooyoung Yang, Hwaseong-si (KR); Changseung Lee, Yongin-si (KR); Sungjin Lim, Suwon-si (KR); and Junsik Hwang, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 8, 2021, as Appl. No. 17/497,523.
Application 17/497,523 is a division of application No. 15/368,892, filed on Dec. 5, 2016, abandoned.
Claims priority of application No. 10-2016-0087382 (KR), filed on Jul. 11, 2016.
Prior Publication US 2022/0025515 A1, Jan. 27, 2022
Int. Cl. C23C 16/34 (2006.01); C23C 16/50 (2006.01); C23C 16/06 (2006.01); C23C 16/44 (2006.01); H01M 4/04 (2006.01); H01M 10/052 (2010.01); H01J 37/32 (2006.01); H01M 16/00 (2006.01); C23C 16/00 (2006.01)
CPC C23C 16/34 (2013.01) [C23C 16/00 (2013.01); C23C 16/06 (2013.01); C23C 16/4408 (2013.01); C23C 16/50 (2013.01); H01J 37/32 (2013.01); H01J 37/3244 (2013.01); H01M 4/0428 (2013.01); H01M 10/052 (2013.01); H01M 16/00 (2013.01); H01J 2237/3321 (2013.01); H01M 2220/30 (2013.01); H01M 2300/0068 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of forming a lithium (Li)-based film, the method comprising:
supplying a Li source material into a reaction chamber in which a substrate is disposed, in a first time duration;
supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber, in a second time duration and a third time duration; and
generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials in the third time duration by supplying power into the reaction chamber in the third time duration and not in the first time duration and the second time duration,
wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval,
wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material, and
wherein the second time duration follows the first time duration, and the third time duration follows the second time duration.