US 11,898,236 B2
Methods and apparatus for processing a substrate
Zhiyong Wang, San Jose, CA (US); Halbert Chong, San Jose, CA (US); John C. Forster, Mountain View, CA (US); Irena H. Wysok, San Jose, CA (US); Tiefeng Shi, San Jose, CA (US); Gang Fu, Cupertino, CA (US); Renu Whig, Chandler, AZ (US); Keith A Miller, Mountain View, CA (US); Sundarapandian Ramalinga Vijayalakshmi Reddy, Bangalore (IN); Jianxin Lei, Fremont, CA (US); Rongjun Wang, Dublin, CA (US); Tza-Jing Gung, San Jose, CA (US); Kirankumar Neelasandra Savandaiah, Bangalore (IN); Avinash Nayak, Bangalore (IN); and Lei Zhou, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 20, 2021, as Appl. No. 17/506,075.
Prior Publication US 2023/0122956 A1, Apr. 20, 2023
Int. Cl. C23C 14/34 (2006.01); H01J 37/32 (2006.01); C23C 14/50 (2006.01)
CPC C23C 14/345 (2013.01) [C23C 14/3485 (2013.01); H01J 37/32027 (2013.01); H01J 37/32091 (2013.01); H01J 37/32174 (2013.01); C23C 14/50 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A processing chamber for processing a substrate, comprising:
a chamber wall at least partially defining an inner volume within the processing chamber and configured to be connected to ground;
a power source comprising an RF power source configured to be connected to a sputtering target, when installed in a lid of the processing chamber;
a process kit surrounding a substrate support disposed in the inner volume;
an auto capacitor tuner (ACT) configured to be connected to ground and the sputtering target, when the sputtering target is installed; and
a controller configured to:
control the RF power source to energize a cleaning gas disposed in the inner volume of the processing chamber to create a plasma during an etch process; and
control the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit,
wherein the predetermined potential difference is based on a resonant point of the ACT, wherein the process kit comprises a shield and
wherein the resonant point is about 58% to about 75% of total tuning capacitance such that the controller is configured to control the etch process so that an edge of the shield at a rate of about 11.7 Å/s, a top of the shield at a rate of about 11.5 Å/s, and a corner of the shield at a rate of about 12 Å/s.