CPC C08G 73/1067 (2013.01) [C08G 73/126 (2013.01); C09D 179/085 (2013.01); H01L 27/1218 (2013.01); G02F 1/133305 (2013.01); H01L 27/1266 (2013.01); H10K 77/111 (2023.02)] | 11 Claims |
1. A polyimide film-based flexible electronic device substrate formed from a polyimide that does not comprise a compound including a Si-containing group, wherein the polyimide has a maximum gradient of 0.005/V or more in a capacitance-voltage measurement of a laminate in which a polyimide film having a film thickness of 0.75 μm is formed on a silicon wafer having a resistance value of 4 Ωcm; wherein the maximum gradient is a maximum value of an absolute value of a gradient in a normalized capacity-voltage curve during a third scan of forward direction scans; wherein a capacity-voltage curve is measured by applying a direct current voltage to the polyimide film with respect to the silicon wafer between a lowest voltage V1 and a highest voltage V2, and measuring capacitance while the direct current voltage is scanned in a forward direction from the lowest voltage V1 to the highest voltage V2 and scanned in a negative direction from the highest voltage V2 to the lowest voltage V1; where the lowest voltage V1 is a voltage at which the capacity of only the polyimide film is observed, and the normalized capacity-voltage curve is normalized so that the capacity at the lowest voltage V1 is 1.
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