US 11,897,759 B2
Semiconductor device and method for forming the same
Po Chen Yeh, New Taipei (TW); Yi-Hsien Chang, Changhua County (TW); Fu-Chun Huang, Hsinchu County (TW); Ching-Hui Lin, Taichung (TW); Chiahung Liu, Hsinchu (TW); Shih-Fen Huang, Hsinchu County (TW); and Chun-Ren Cheng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 10, 2022, as Appl. No. 17/838,023.
Prior Publication US 2023/0399225 A1, Dec. 14, 2023
Int. Cl. B81B 7/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 7/007 (2013.01) [B81C 1/00301 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81B 2207/097 (2013.01); B81C 2203/0792 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first device and a second device disposed adjacent to the first device;
a conductive pillar disposed adjacent to the first device or the second device;
a molding surrounding the first device, the second device and the conductive pillar; and
a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.