CPC B81B 7/007 (2013.01) [B81C 1/00301 (2013.01); B81B 2207/092 (2013.01); B81B 2207/095 (2013.01)] | 15 Claims |
1. An electrical contacting between a surrounding wiring and a conductor region, the conductor region being situated in a conductor layer above an SOI wafer or SOI chip, a cover layer being situated above the conductor layer and below the surrounding wiring, the cover layer having a contacting region, the contacting region being insulated from the rest of the cover layer by a first configuration of recesses, an opening is formed at least in the contacting region, a metallic material is situated in the opening, and the metallic material connects the surrounding wiring and the conductor region, wherein the conductor region is separated from a further conductor region by a second configuration of recesses, wherein the conductor region is insulated from the further conductor region by the second configuration of recesses.
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