US RE50,296 E1
Electron beam resist composition
Scott Lewis, Manchester (GB); Richard Winpenny, Manchester (GB); and Stephen Yeates, Manchester (GB)
Assigned to The University of Manchester, Manchester (GB)
Filed by The University of Manchester, Manchester (GB)
Filed on Jul. 21, 2021, as Appl. No. 17/382,172.
Application 17/382,172 is a continuation of application No. 15/501,417, granted, now 10,234,764, issued on Mar. 19, 2019, previously published as PCT/GB2015/052204, filed on Jul. 30, 2015.
Application 17/382,172 is a reissue of application No. 16/197,133, filed on Nov. 20, 2018, granted, now 10,613,441, issued on Apr. 7, 2020.
Claims priority of application No. 1413924 (GB), filed on Aug. 6, 2014.
Int. Cl. G03F 7/20 (2006.01); G03F 7/004 (2006.01); H01J 37/317 (2006.01)
CPC G03F 7/2059 (2013.01) [G03F 7/0047 (2013.01); H01J 37/3175 (2013.01)] 56 Claims
 
1. An antiscattering [ anti-scattering ] resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the antiscattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC) [ , wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species, wherein the primary metal complex is a polymetallic cage or polymetallic ring] .