| CPC H10N 70/841 (2023.02) [H10N 70/063 (2023.02); H10B 63/80 (2023.02); H10N 70/826 (2023.02)] | 20 Claims |

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1. A structure comprising:
a resistive switching device (RSD) comprising:
a first terminal having an outer sidewall surface;
a second terminal;
an active region having a switchable conduction state;
an undercut region at least partially defined by the outer sidewall surface and a portion of a top surface of the active region; and
a first protective layer within the undercut region.
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