US 12,225,834 B2
Method for forming semiconductor structure
Hsing-Lien Lin, Hsin-Chu (TW); Hai-Dang Trinh, Hsinchu (TW); and Fa-Shen Jiang, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 1, 2021, as Appl. No. 17/335,831.
Application 17/335,831 is a division of application No. 16/157,736, filed on Oct. 11, 2018, granted, now 11,038,101.
Claims priority of provisional application 62/589,220, filed on Nov. 21, 2017.
Prior Publication US 2021/0288248 A1, Sep. 16, 2021
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10N 70/011 (2023.02); H10N 70/066 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8413 (2023.02); H10N 70/8613 (2023.02); H10B 63/30 (2023.02); H10N 70/8828 (2023.02); H10N 70/884 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a first metal layer, wherein a material of the first metal layer is selected from the group consisting of tungsten (W), aluminum (Al), and aluminum copper (AlCu);
forming a first dielectric layer over the first metal layer, the first dielectric layer comprising at least one trench exposing the first metal layer, wherein a bottom surface of the first dielectric layer is aligned with a top surface of the first metal layer;
forming a second metal layer in the trench, wherein a material of the second metal layer is selected from the group consisting of tantalum (Ta), titanium nitride (TiN), tungsten nitride (WN), tungsten (W), palladium (Pd), nickel chromium (NiCr), zirconium (Zr), and niobium (Nb);
forming a third metal layer in the trench, wherein a resistivity of the third metal layer is greater than a resistivity of the second metal layer, and a material of the third metal layer is selected from the group consisting of titanium nitride (TiN), tantalum nitride (TaN), and tantalum aluminum nitride (TaAlN);
forming a second dielectric layer over the third metal layer; and
forming a phase change material over the first dielectric layer,
wherein a top surface of the third metal layer is entirely in contact with the phase change material.