US 12,225,833 B2
Oxide-based resistive memory having a plasma-exposed bottom electrode
Takashi Ando, Eastchester, NY (US); Hiroyuki Miyazoe, White Plains, NY (US); Eduard Albert Cartier, New York, NY (US); Babar Khan, Ossining, NY (US); Youngseok Kim, Upper Saddle River, NJ (US); Dexin Kong, Guilderland, NY (US); Soon-Cheon Seo, Glenmont, NY (US); and Joel P. De Souza, Putam Valley, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Feb. 3, 2023, as Appl. No. 18/164,125.
Application 18/164,125 is a division of application No. 16/898,527, filed on Jun. 11, 2020, granted, now 11,647,680.
Prior Publication US 2023/0263077 A1, Aug. 17, 2023
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/041 (2023.02) [H10B 63/80 (2023.02); H10N 70/021 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A resistive switching device comprising:
a metal interconnect electrode; and
a charge-particle-treated memory stack over the metal interconnect electrode;
wherein the memory stack comprises a plurality of layers that includes a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode;
wherein the dielectric layer comprises a portion of a blanket dielectric layer;
wherein the bottom electrode comprises a portion of a blanket bottom electrode layer; and
wherein the charge-particle-treated memory stack further comprises a current-conducting filament characteristic that results from charge particle treatments applied while a top surface of the blanket dielectric layer is exposed and a top surface of the blanket bottom electrode is exposed.