US 12,225,830 B2
Magnetoresistance effect element and magnetic recording array
Shogo Yamada, Tokyo (JP); Minoru Ota, Tokyo (JP); and Tatsuo Shibata, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Dec. 6, 2021, as Appl. No. 17/542,647.
Application 17/542,647 is a continuation in part of application No. PCT/JP2021/005660, filed on Feb. 16, 2021.
Claims priority of application No. 2020-026411 (JP), filed on Feb. 19, 2020.
Prior Publication US 2022/0165934 A1, May 26, 2022
Int. Cl. H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element, comprising:
a magnetic recording layer which includes a ferromagnetic material;
a non-magnetic layer which is laminated on the magnetic recording layer; and
a magnetization reference layer which is laminated on the non-magnetic layer,
wherein the magnetic recording layer has a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer,
the first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled,
the magnetic recording layer has
a central region in which a product of a film thickness and a saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and a saturation magnetization of the second ferromagnetic layer, and
an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer, and
the outer region is located outside the central region in a plan view from a laminating direction.