US 12,225,829 B2
Semiconductor structure, electrode structure and method of forming the same
Chung-Yen Chou, Hsinchu (TW); Fu-Ting Sung, Taoyuan County (TW); Yao-Wen Chang, Taipei (TW); and Shih-Chang Liu, Kaohsiung County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 13, 2023, as Appl. No. 18/167,907.
Application 15/623,928 is a division of application No. 14/996,950, filed on Jan. 15, 2016, granted, now 9,711,713, issued on Jul. 18, 2017.
Application 18/167,907 is a continuation of application No. 17/392,927, filed on Aug. 3, 2021, granted, now 11,581,484.
Application 17/392,927 is a continuation of application No. 16/668,775, filed on Oct. 30, 2019, granted, now 11,114,610, issued on Sep. 7, 2021.
Application 16/668,775 is a continuation of application No. 15/623,928, filed on Jun. 15, 2017, granted, now 10,468,587, issued on Nov. 5, 2019.
Prior Publication US 2023/0200254 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 50/10 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
depositing a dielectric layer over a top surface of a first metal layer;
forming a bottom electrode via (BEVA) hole penetrating the dielectric layer;
forming a diffusion barrier layer and a flowable film over the dielectric layer and in the BEVA hole, wherein a portion of the diffusion barrier layer overlapping a top surface of the dielectric layer is exposed through the flowable film;
employing an etching operation to remove the diffusion barrier layer at a faster rate than the flowable film until a top surface of the diffusion barrier layer is lower than a top surface of the dielectric layer; and
forming a magnetic tunneling junction (MTJ) structure over the top surface of the dielectric layer and covering the diffusion barrier layer.