US 12,225,828 B2
Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer
Alan Kalitsov, San Jose, CA (US); Bhagwati Prasad, San Jose, CA (US); Rajesh Chopdekar, San Jose, CA (US); Lei Wan, San Jose, CA (US); and Tiffany Santos, Palo Alto, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES, INC., Milpitas, CA (US)
Filed on Dec. 13, 2022, as Appl. No. 18/065,098.
Application 18/065,098 is a continuation in part of application No. 17/358,990, filed on Jun. 25, 2021, granted, now 11,839,162.
Application 18/065,098 is a continuation in part of application No. 17/341,049, filed on Jun. 7, 2021, granted, now 11,871,679.
Application 17/358,990 is a continuation in part of application No. 17/203,420, filed on Mar. 16, 2021, granted, now 11,361,805, issued on Jun. 14, 2022.
Application 17/203,420 is a continuation in part of application No. 16/692,965, filed on Nov. 22, 2019, granted, now 11,005,034, issued on May 11, 2021.
Prior Publication US 2023/0107190 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); G11C 11/1697 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first electrode;
a second electrode; and
a magnetic tunnel junction located between the first electrode and the second electrode and comprising:
a reference layer;
a free layer;
a nonmagnetic tunnel barrier layer located between the reference layer and the free layer; and
a platinum-containing layer comprising platinum and at least one element selected from iridium, hafnium or ruthenium, wherein the platinum-containing layer contacts the free layer.