US 12,225,770 B2
Light emitting display device and manufacturing method thereof
Keun Woo Kim, Seongnam-si (KR); Tae Wook Kang, Seongnam-si (KR); Han Bit Kim, Seoul (KR); Bum Mo Sung, Hanam-si (KR); Do Kyeong Lee, Yongin-si (KR); and Jae Seob Lee, Seoul (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Nov. 30, 2023, as Appl. No. 18/525,662.
Application 18/078,072 is a division of application No. 17/062,299, filed on Oct. 2, 2020, granted, now 11,552,149, issued on Jan. 10, 2023.
Application 18/525,662 is a continuation of application No. 18/078,072, filed on Dec. 8, 2022, granted, now 11,871,617.
Claims priority of application No. 10-2020-0028437 (KR), filed on Mar. 6, 2020.
Prior Publication US 2024/0107808 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 59/121 (2023.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01)
CPC H10K 59/1213 (2023.02) [H10K 59/1216 (2023.02); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02661 (2013.01); H01L 21/02675 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 29/42384 (2013.01); H01L 2029/42388 (2013.01); H01L 29/6675 (2013.01); H01L 29/78645 (2013.01); H01L 29/78672 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A light emitting display device, comprising:
a light emitting element;
a second transistor connected to a scan line;
a first transistor which applies a current to the light emitting element;
a capacitor connected to a gate electrode of the first transistor; and
a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor,
wherein a channel of the third transistor includes a polycrystalline semiconductor, and
a width of a channel of the third transistor is in a range of 1 μm to 2 μm, and a length of the channel of the third transistor is in a range of 1 μm to 2.5 μm.