US 12,225,747 B2
Quantum dot device and electronic device
Won Sik Yoon, Suwon-si (KR); Ju Hyun Kim, Suwon-si (KR); Ha Il Kwon, Suwon-si (KR); Kwang Hee Kim, Suwon-si (KR); Taehyung Kim, Suwon-si (KR); Su Jin Park, Suwon-si (KR); and Dae Young Chung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 17, 2023, as Appl. No. 18/512,352.
Claims priority of application No. 10-2022-0186133 (KR), filed on Dec. 27, 2022.
Prior Publication US 2024/0224564 A1, Jul. 4, 2024
Int. Cl. H01L 51/50 (2006.01); H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/156 (2023.02); H10K 50/16 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising
an anode and a cathode spaced apart from each other,
a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots;
a first hole auxiliary layer disposed between the anode and the light emitting layer, the first hole auxiliary layer comprising poly (3,4-ethylenedioxythiophene) polystyrenesulfonate or a derivative thereof (PEDOT:PSS),
a second hole auxiliary layer disposed between the first hole auxiliary layer and the light emitting layer, the second hole auxiliary layer comprising a hole transport material different from a material of the first hole auxiliary layer,
wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and
the second surface of the first hole auxiliary layer comprises a surface modification region comprising a surface modification material including a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof,
wherein in the first hole auxiliary layer a volume of the surface modification material is less than a volume of the PEDOT:PSS.