US 12,225,746 B2
Light emitting device, production method thereof, and display device including the same
Hyo Sook Jang, Suwon-si (KR); Eun Joo Jang, Suwon-si (KR); Ilyoung Lee, Yongin-si (KR); Tae Ho Kim, Seongnam-si (KR); Kun Su Park, Seongnam-si (KR); and Jun-Mo Yoo, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 1, 2021, as Appl. No. 17/515,652.
Claims priority of application No. 10-2020-0143673 (KR), filed on Oct. 30, 2020.
Prior Publication US 2022/0140272 A1, May 5, 2022
Int. Cl. H10K 50/115 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/88 (2006.01); H10K 85/30 (2023.01)
CPC H10K 50/115 (2023.02) [C09K 11/883 (2013.01); H10K 85/381 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a light emitting layer comprising a plurality of quantum dots, and
an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof,
wherein the electron auxiliary layer comprises a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex,
the metal oxide nanoparticles comprise zinc,
the nitrogen-containing metal complex comprises zinc, and
a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1 and less than or equal to 1:1.