US 12,225,741 B2
Semiconductor device including source/drain having sidewalls with convex and concave portions
Dong-chan Suh, Suwon-si (KR); Gi-gwan Park, Hwaseong-si (KR); Dong-woo Kim, Incheon (KR); and Dong-suk Shin, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 29, 2023, as Appl. No. 18/216,041.
Application 18/216,041 is a continuation of application No. 17/345,090, filed on Jun. 11, 2021, granted, now 11,728,345.
Application 17/345,090 is a continuation of application No. 17/014,254, filed on Sep. 8, 2020, granted, now 11,037,926, issued on Jun. 15, 2021.
Application 17/014,254 is a continuation of application No. 16/453,721, filed on Jun. 26, 2019, granted, now 11,069,685, issued on Jul. 21, 2021.
Application 16/453,721 is a continuation of application No. 15/611,893, filed on Jun. 2, 2017, granted, now 10,361,202, issued on Jul. 23, 2019.
Claims priority of application No. 10-2016-0077545 (KR), filed on Jun. 21, 2016.
Prior Publication US 2023/0343787 A1, Oct. 26, 2023
Int. Cl. H01L 27/092 (2006.01)
CPC H10D 84/853 (2025.01) [H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 62/405 (2025.01); H10D 62/822 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a fin protruding from the substrate;
a plurality of nanosheets on the fin;
a source/drain on the fin;
a gate on the fin, the gate including a main gate portion on the plurality of nanosheets, and a plurality of sub-gate portions between the plurality of nanosheets and the fin; and
a plurality of insulating spacers on sidewalls of the plurality of sub-gate portions; and
a plurality of air spacers between the plurality of insulating spacers and the source/drain,
wherein the source/drain have a pair of sidewalls opposite each other, and
wherein a first portion of each side surface of the pair of sidewalls of the source/drain is a concave surface and a second portion of each side surface of the pair of sidewalls of the source/drain is a convex surface, the first portion extending in a vertical direction from a level of an upper surface of an insulating spacer to a level of a lower surface of the insulating spacer and the second portion extending in the vertical direction from a level of a middle portion of the insulating spacer to a level of a middle portion of an adjacent insulating spacer.