US 12,225,726 B2
Memory device and method of manufacturing the same
Nam Jae Lee, Cheongju-si Chungcheongbuk-do (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed on Oct. 27, 2022, as Appl. No. 17/975,241.
Application 17/975,241 is a division of application No. 16/880,678, filed on May 21, 2020, granted, now 11,527,549.
Claims priority of application No. 10-2019-0123129 (KR), filed on Oct. 4, 2019.
Prior Publication US 2023/0051615 A1, Feb. 16, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/40 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory device, the method comprising:
providing a stacked structure having a cell region and a slimming region;
forming vertical channel structures in the stacked structure in the cell region;
forming support structures, in the stacked structure in the slimming region simultaneously with forming the vertical channel structures, wherein the support structures have the same structure as the vertical channel structures; and
performing a slimming process so that the stacked structure in the slimming region and the support structures have a stepped structure.