US 12,225,722 B2
Non-volatile memory device including selection gate and manufacturing method thereof
Jin Shik Choi, Chilgok-gun (KR); Su Jin Kim, Cheongju-si (KR); and Won Kyu Lim, Cheongju-si (KR)
Assigned to SK keyfoundry Inc., Cheongju-si (KR)
Filed by SK keyfoundry Inc., Cheongju-si (KR)
Filed on Dec. 23, 2021, as Appl. No. 17/560,627.
Claims priority of application No. 10-2021-0080562 (KR), filed on Jun. 22, 2021.
Prior Publication US 2022/0406802 A1, Dec. 22, 2022
Int. Cl. H10B 41/41 (2023.01); H10B 41/10 (2023.01); H10B 41/50 (2023.01); H01L 25/065 (2023.01)
CPC H10B 41/41 (2023.02) [H10B 41/10 (2023.02); H10B 41/50 (2023.02); H01L 25/0655 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile memory device, comprising:
a source region and a drain region disposed in a channel length direction on a substrate;
a flash cell, comprising a floating gate and a control gate, disposed between the source region and the drain region;
a selection gate disposed between the source region and the flash cell;
a selection line connecting the selection gate;
a word line connecting the control gate;
a common source line connected to the source region;
a bit line connected to the drain region;
a control gate pick up structure, connected to the control gate, comprising a plurality of floating gate poly-silicon patterns; and
a control gate contact plug disposed between the plurality of floating gate poly-silicon patterns.