US 12,225,717 B2
Semiconductor device with dielectric structure having enlargemant portion surrounding word line
Chung-Lin Huang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Sep. 20, 2023, as Appl. No. 18/470,446.
Application 18/470,446 is a division of application No. 17/647,346, filed on Jan. 6, 2022, granted, now 11,805,640.
Prior Publication US 2024/0015956 A1, Jan. 11, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/488 (2023.02) [H10B 12/053 (2023.02); H10B 12/34 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a passing word line in the substrate; and
a dielectric structure surrounding the passing word line, wherein the dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure, the enlargement portion comprises a top portion and a bottom portion meeting at the maximum width of the enlargement portion, a width of the top portion of the enlargement portion of the dielectric structure gradually increases downward to the maximum width, and a width of the bottom portion of the enlargement portion of the dielectric structure gradually decreases, and wherein the top portion of the enlargement portion of the dielectric structure is in contact with the substrate.