US 12,225,715 B2
Semiconductor device having semiconductor layers disposed between upper portions of the isolation structures and the active regions
Yu-Cheng Tung, Quanzhou (CN); and Janbo Zhang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Nov. 9, 2022, as Appl. No. 17/983,402.
Claims priority of application No. 202210965553.5 (CN), filed on Aug. 12, 2022; and application No. 202222119832.8 (CN), filed on Aug. 12, 2022.
Prior Publication US 2024/0057315 A1, Feb. 15, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/34 (2023.02) [H10B 12/053 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a plurality of active regions disposed in the substrate, respectively extending along a first direction and arranged into an array;
a plurality of isolation structures disposed in the substrate between the active regions and respectively comprising an upper portion having a first thickness and a lower portion having a second thickness, wherein a sidewall of the upper portion comprises a first slope, a sidewall of the lower portion comprises a second slop, and the first slope and the second slope are different; and
a plurality of semiconductor layers disposed between the upper portions of the isolation structures and the active regions.