CPC H10B 12/34 (2023.02) [H10B 12/053 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02)] | 11 Claims |
1. A semiconductor device, comprising:
a substrate;
a plurality of active regions disposed in the substrate, respectively extending along a first direction and arranged into an array;
a plurality of isolation structures disposed in the substrate between the active regions and respectively comprising an upper portion having a first thickness and a lower portion having a second thickness, wherein a sidewall of the upper portion comprises a first slope, a sidewall of the lower portion comprises a second slop, and the first slope and the second slope are different; and
a plurality of semiconductor layers disposed between the upper portions of the isolation structures and the active regions.
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