US 12,225,710 B2
Memory device with cross shape active layer surrounded by word line
Il Do Kim, Gyeonggi-do (KR); Dong Sun Sheen, Gyeonggi-do (KR); and Seung Hwan Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 30, 2023, as Appl. No. 18/524,646.
Application 18/524,646 is a continuation of application No. 17/158,756, filed on Jan. 26, 2021, granted, now 11,871,556.
Claims priority of application No. 10-2020-0080872 (KR), filed on Jul. 1, 2020.
Prior Publication US 2024/0098972 A1, Mar. 21, 2024
Int. Cl. H10B 12/00 (2023.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/76 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H10B 12/30 (2023.02) [H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/0673 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/7606 (2013.01); H01L 29/775 (2013.01); H01L 29/78672 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a substrate;
a cross shape active layer spaced apart from a surface of the substrate and laterally oriented in a first direction, and including a first side, a second side, and a channel layer between the first side and the second side; and
a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.