| CPC H10B 10/12 (2023.02) [G11C 11/412 (2013.01); H01L 29/1033 (2013.01)] | 20 Claims |
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1. A method of manufacturing a semiconductor device, the method comprising:
forming a first sacrificial layer and a first active layer on a substrate;
forming a first mask pattern on a portion of the substrate;
etching the first sacrificial layer and the first active layer partially using the first mask pattern as a mask to expose a portion of a top surface of the substrate;
forming a semiconductor layer on the exposed portion of the top surface of the substrate;
forming sacrificial layers and active layers on the first active layer and the semiconductor layer, the active layers including an uppermost second active layer;
forming a second mask pattern on a portion of the uppermost second active layer;
forming a trench using the second mask pattern as an etch mask, the trench defining a first active pattern and a second active pattern; and
removing the sacrificial layers to form a first channel pattern and a second channel pattern on the first active pattern and the second active pattern, respectively,
wherein the first active pattern includes the semiconductor layer.
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