US 12,225,702 B2
Dual port SRAM cell and method of designing the same
Eojin Lee, Suwon-si (KR); Daeyoung Moon, Yongin-si (KR); Hoyoung Tang, Seoul (KR); and Taehyung Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 30, 2022, as Appl. No. 17/957,826.
Claims priority of application No. 10-2021-0135305 (KR), filed on Oct. 12, 2021.
Prior Publication US 2023/0113482 A1, Apr. 13, 2023
Int. Cl. G11C 11/412 (2006.01); G11C 8/16 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01)
CPC H10B 10/12 (2023.02) [G11C 8/16 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A dual-port static random access memory (SRAM) cell comprising:
a plurality of P-type active patterns that are spaced apart from one another along a first direction, each of the plurality of P-type active patterns extending in a second direction perpendicular to the first direction and including at least one transistor, wherein the plurality of P-type active patterns comprises a first P-type active pattern, a second P-type active pattern, a third P-type active pattern, a fourth P-type active pattern, a fifth P-type active pattern and a sixth P-type active pattern which are sequentially arranged along the first direction,
wherein a first cutting area is provided between the second P-type active pattern and a first boundary of the dual-port SRAM cell that extends along the first direction,
a second cutting area is provided between the fifth P-type active pattern and a second boundary that is opposite to the first boundary and extends along the first direction,
the second P-type active pattern has a constant width in the first direction, and the third P-type active pattern has a constant width in the first direction, and
the constant width of the second P-type active pattern is different from the constant width of the third P-type active pattern.