US 12,225,305 B2
Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions
Pooria Mostafalu, New York, NY (US); Giri Mehta, Rochester, NY (US); Frederick Brady, Webster, NY (US); and Ping Wah Wong, Sunnyvale, CA (US)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/779,319
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Dec. 2, 2020, PCT No. PCT/JP2020/044942
§ 371(c)(1), (2) Date May 24, 2022,
PCT Pub. No. WO2021/112151, PCT Pub. Date Jun. 10, 2021.
Application 17/779,319 is a continuation of application No. 16/700,281, filed on Dec. 2, 2019, granted, now 11,330,211, issued on May 10, 2022.
Prior Publication US 2023/0062826 A1, Mar. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H04N 25/702 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01)
CPC H04N 25/702 (2023.01) [H01L 27/1463 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 25/75 (2023.01)] 21 Claims
OG exemplary drawing
 
1. A sensor, comprising:
a pixel array unit, wherein the pixel array unit includes:
a plurality of event detection pixels, the plurality of event detection pixels including a first pixel, the first pixel including:
a first photoelectric conversion region disposed in a substrate; and
a first amplifier transistor coupled to the first photoelectric conversion region;
a plurality of image sensing pixels, the plurality of image sensing pixels including:
a second pixel including a second photoelectric conversion region disposed in the substrate;
a third pixel including a third photoelectric conversion region disposed in the substrate; and
a second amplifier transistor coupled to the second and third photoelectric conversion regions;
a first isolation region disposed in the substrate between the first pixel and the second pixel; and
a second isolation region disposed between the second pixel and the third pixel, wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate.