| CPC H04N 23/11 (2023.01) [H04N 23/12 (2023.01); H04N 23/667 (2023.01); H04N 25/135 (2023.01); H04N 25/79 (2023.01); H10K 39/32 (2023.02)] | 20 Claims |

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1. An image sensor, comprising:
a first transparent conductive layer;
a second conductive layer; and
an optical sensor arranged between the first transparent conductive layer and the second conductive layer, and comprising a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges; and
a semiconductor substrate below the second conductive layer.
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