US 12,224,753 B2
Manufacturing method of an input circuit of a flip-flop
Jin-Wei Xu, Hsinchu (TW); Hui-Zhong Zhuang, Kaohsiung (TW); and Chih-Liang Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 3, 2023, as Appl. No. 18/365,199.
Application 17/673,513 is a division of application No. 16/837,886, filed on Apr. 1, 2020, granted, now 11,296,682, issued on Apr. 5, 2022.
Application 18/365,199 is a continuation of application No. 17/673,513, filed on Feb. 16, 2022, granted, now 11,811,407.
Prior Publication US 2023/0412157 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H03K 3/356 (2006.01)
CPC H03K 3/356017 (2013.01) [H01L 21/823871 (2013.01); H01L 23/528 (2013.01); H01L 27/092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method of an input circuit of a flip-flop, comprising:
depositing a first gate strip, a second gate strip, a third gate strip, and a fourth gate strip;
executing a cut-off operation upon the first gate strip to generate a first first gate strip and a second first gate strip, wherein the first first gate strip is a gate terminal of a first PMOS, and the second first gate strip is a gate terminal of a first NMOS;
executing a cut-off operation upon the third gate strip to generate a first third gate strip and a second third gate strip, wherein the first third gate strip is a gate terminal of a second PMOS and the second third gate strip is a gate terminal of a second NMOS; and
directing a first signal to the first first gate strip and the second third gate strip, and a second signal to the second first gate strip and the first third gate strip;
forming a first conductive strip connected between the first first gate strip and the second third gate; and
forming a second conductive strip connected between the second first gate strip and the first third gate.