US 12,224,741 B2
Control circuit with bias circuitry for a semiconductor memory
Yupeng Fan, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Sep. 27, 2022, as Appl. No. 17/935,811.
Application 17/935,811 is a continuation of application No. PCT/CN2022/087731, filed on Apr. 19, 2022.
Claims priority of application No. 202210306176.4 (CN), filed on Mar. 25, 2022.
Prior Publication US 2023/0025992 A1, Jan. 26, 2023
Int. Cl. H03K 17/687 (2006.01); G11C 11/4074 (2006.01); H03K 19/20 (2006.01)
CPC H03K 17/6871 (2013.01) [G11C 11/4074 (2013.01); H03K 19/20 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A control circuit, comprising a bias circuit, the bias circuit being configured to provide a bias current for a functional circuit,
the bias circuit comprising a first bias circuit and a second bias circuit, the first bias circuit being configured to provide a first bias current, and the second bias circuit being configured to provide a second bias current, wherein the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal;
wherein the functional circuit is configured to receive an excitation signal and to be started based on the excitation signal, wherein a time point when the functional circuit receives the excitation signal is later than a time point when the bias circuit receives the bias enabling signal; and
wherein the control circuit further comprising an enabling circuit, wherein the enabling circuit is configured to receive a power switching signal and output the bias enabling signal and the excitation signal based on the power switching signal, wherein the power switching signal characterizes starting the functional circuit.