US 12,224,740 B2
Load switch including back-to-back connected transistors
Jinbiao Huang, Nashua, NH (US); and John Lin, Carlsbad, CA (US)
Assigned to Nuvolta Technoloiges (Heifei) Co., Ltd., Hefei (CN)
Filed by Nuvolta Technologies (Hefei) Co., Ltd., Hefei (CN)
Filed on Aug. 17, 2021, as Appl. No. 17/404,284.
Application 17/404,284 is a continuation in part of application No. 17/382,800, filed on Jul. 22, 2021, granted, now 11,923,837.
Claims priority of provisional application 63/118,342, filed on Nov. 25, 2020.
Prior Publication US 2022/0166426 A1, May 26, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/00 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01)
CPC H03K 17/687 (2013.01) [H01L 21/76205 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 29/00 (2013.01); H01L 29/7816 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method comprising:
in an off-state of a load switch comprising two back-to-back connected transistors including a first gate, a second gate and a third gate formed over and in direct contact with a continuous dielectric layer, connecting the first gate and the second gate of the two back-to-back connected transistors to a first voltage potential lower than turn-on thresholds of the two back-to-back connected transistors, and connecting the third gate to a first source of the two back-to-back connected transistors; and
in an on-state of the load switch, connecting the first gate and the second gate of the two back-to-back connected transistors to a second voltage potential higher than the turn-on thresholds of the two back-to-back connected transistors, and connecting the third gate to a third voltage potential higher than the turn-on thresholds of the two back-to-back connected transistors.