US 12,224,723 B2
High frequency power amplification device
Kazuhiko Ohhashi, Osaka (JP); and Masatoshi Kamitani, Osaka (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on Feb. 21, 2024, as Appl. No. 18/583,589.
Application 18/583,589 is a continuation of application No. 18/264,548, previously published as PCT/JP2022/006393, filed on Feb. 17, 2022.
Claims priority of provisional application 63/150,757, filed on Feb. 18, 2021.
Prior Publication US 2024/0195369 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H03F 1/07 (2006.01); H03F 1/02 (2006.01); H03F 1/26 (2006.01); H03F 3/24 (2006.01)
CPC H03F 3/245 (2013.01) [H03F 1/0288 (2013.01); H03F 1/26 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21127 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A radio-frequency power amplifier device that is a radio-frequency power amplifier device of a hybrid type in which a carrier amplifier semiconductor device and a peak amplifier semiconductor device are disposed on a principal surface of a multilayer submount substrate, the multilayer submount substrate including a plurality of resin layers and a plurality of wiring layers, the radio-frequency power amplifier device comprising:
radio-frequency signal wiring that is wired in a first wiring layer provided on the principal surface, and transmits a radio-frequency signal to the carrier amplifier semiconductor device or the peak amplifier semiconductor device; and
bias power supply wiring that is wired in a wiring layer lower than the first wiring layer of the multilayer submount substrate, and supplies a carrier-amplifier bias power supply voltage to the carrier amplifier semiconductor device or supplies a peak-amplifier bias power supply voltage to the peak amplifier semiconductor device,
wherein the carrier amplifier semiconductor device includes a first semiconductor substrate,
the peak amplifier semiconductor device includes a second semiconductor substrate having a thermal conductivity lower than a thermal conductivity of the first semiconductor substrate, and
the multilayer submount substrate includes an intersection portion in which, in a plan view of the multilayer submount substrate, the radio-frequency signal wiring and the bias power supply wiring intersect.