CPC H03F 3/245 (2013.01) [H03F 1/0288 (2013.01); H03F 1/26 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21127 (2013.01)] | 17 Claims |
1. A radio-frequency power amplifier device that is a radio-frequency power amplifier device of a hybrid type in which a carrier amplifier semiconductor device and a peak amplifier semiconductor device are disposed on a principal surface of a multilayer submount substrate, the multilayer submount substrate including a plurality of resin layers and a plurality of wiring layers, the radio-frequency power amplifier device comprising:
radio-frequency signal wiring that is wired in a first wiring layer provided on the principal surface, and transmits a radio-frequency signal to the carrier amplifier semiconductor device or the peak amplifier semiconductor device; and
bias power supply wiring that is wired in a wiring layer lower than the first wiring layer of the multilayer submount substrate, and supplies a carrier-amplifier bias power supply voltage to the carrier amplifier semiconductor device or supplies a peak-amplifier bias power supply voltage to the peak amplifier semiconductor device,
wherein the carrier amplifier semiconductor device includes a first semiconductor substrate,
the peak amplifier semiconductor device includes a second semiconductor substrate having a thermal conductivity lower than a thermal conductivity of the first semiconductor substrate, and
the multilayer submount substrate includes an intersection portion in which, in a plan view of the multilayer submount substrate, the radio-frequency signal wiring and the bias power supply wiring intersect.
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