US 12,224,721 B2
Power amplifier with quasi-static drain voltage adjustment
Joel Lawrence Dawson, Roslindale, MA (US); Gangadhar Burra, Fremont, CA (US); Frederick L. Martin, Plantation, FL (US); Mark Briffa, Tyreso (SE); Rached Hajjii, Murphy, TX (US); Amin Shahverdi, Murphy, TX (US); Elias Reese, Dallas, TX (US); Nikolaus Klemmer, Dallas, TX (US); and Jeffrey Gengler, McKinney, TX (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by Qorvo US, Inc., Greensboro, NC (US)
Filed on Sep. 29, 2021, as Appl. No. 17/488,920.
Claims priority of provisional application 63/163,200, filed on Mar. 19, 2021.
Prior Publication US 2022/0302888 A1, Sep. 22, 2022
Int. Cl. H03F 3/24 (2006.01); H01L 29/20 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01)
CPC H03F 3/245 (2013.01) [H01L 29/2003 (2013.01); H03F 1/0238 (2013.01); H03F 1/303 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A module comprising:
a power amplifier formed from a Gallium Nitride (GaN) material, the power amplifier having a process corner;
a match circuit coupled to an input of the power amplifier; and
a microcontroller coupled to the power amplifier and the match circuit, the microcontroller configured to:
set a drain bias for the power amplifier based on the process corner; and
send a control signal to the match circuit.