US 12,224,558 B2
Light emitting element and method for manufacturing same
Masayuki Tanaka, Tokyo (JP); Kentaro Fujii, Tokyo (JP); Tatsushi Hamaguchi, Tokyo (JP); and Rintaro Koda, Tokyo (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Appl. No. 17/286,335
Filed by SONY GROUP CORPORATION, Tokyo (JP)
PCT Filed Sep. 11, 2019, PCT No. PCT/JP2019/035711
§ 371(c)(1), (2) Date Apr. 16, 2021,
PCT Pub. No. WO2020/084942, PCT Pub. Date Apr. 30, 2020.
Claims priority of application No. 2018-201549 (JP), filed on Oct. 26, 2018.
Prior Publication US 2021/0384707 A1, Dec. 9, 2021
Int. Cl. H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18361 (2013.01) [H01S 5/34333 (2013.01); H01S 5/34346 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A light emitting element, comprising:
a layered structure that includes:
a first compound semiconductor layer having a first surface and a second surface opposite to the first surface,
an active layer that faces the second surface of the first compound semiconductor layer, and
a second compound semiconductor layer having a third surface that faces the active layer, and a fourth surface opposite to the third surface;
a substrate;
a first light reflecting layer on a side of the first surface of the first compound semiconductor layer;
a second light reflecting layer on a side of the fourth surface of the second compound semiconductor layer, wherein
the second light reflecting layer has a flat shape,
a surface of the substrate has a concave surface portion,
the first light reflecting layer is on at least the concave surface portion, and
the first compound semiconductor layer extends from the surface of the substrate on the concave surface portion; and
a cavity between the first light reflecting layer and the first compound semiconductor layer.