US 12,224,555 B2
Nanocavity monolayer laser monolithically integrated with LED pump
Jeehwan Kim, Los Angeles, CA (US); Ning Li, White Plains, NY (US); Devendra K. Sadana, Pleasantville, NY (US); and Brent A. Wacaser, Putnam Valley, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jul. 26, 2019, as Appl. No. 16/522,908.
Application 16/522,908 is a division of application No. 14/799,395, filed on Jul. 14, 2015, granted, now 10,431,956.
Prior Publication US 2019/0363514 A1, Nov. 28, 2019
Int. Cl. H01S 5/10 (2021.01); H01S 3/0933 (2006.01); H01S 5/026 (2006.01); H01S 5/04 (2006.01); H01S 5/11 (2021.01); H01S 5/30 (2006.01); H01L 33/58 (2010.01)
CPC H01S 5/1042 (2013.01) [H01S 3/0933 (2013.01); H01S 5/041 (2013.01); H01S 5/1067 (2013.01); H01S 5/11 (2021.01); H01S 5/30 (2013.01); H01L 33/58 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01); H01S 5/026 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for forming a pumped laser structure, comprising:
forming a III-V buffer layer having a monocrystalline crystal structure on a substrate including one of Si or Ge;
forming a light emitting diode (LED) on the buffer layer, the LED configured to produce a threshold pump power of about 100 mW/mm2;
forming a photonic crystal layer in contact with the LED; and
depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonie crystal layer from the LED, wherein the LED and the laser are monolithically integrated, with the photonic crystal layer positioned directly between the LED and the nanocavity laser such that the LED functions as an optical pump for the laser by producing light output with a threshold pump power that corresponds to the threshold value of the monolayer semiconductor nanocavity laser and the photonic crystal guides the LED's output to the monolayer semiconductor nanocavity laser.