US 12,224,553 B2
Laser diode and manufacturing method of the same
Su Hwan Oh, Daejeon (KR); Oh Kee Kwon, Sejong-si (KR); Chul-Wook Lee, Daejeon (KR); and Kisoo Kim, Daejeon (KR)
Assigned to Electronics and Telecommunications Research Institute, Daejeon (KR)
Filed by ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon (KR)
Filed on Dec. 23, 2021, as Appl. No. 17/561,212.
Claims priority of application No. 10-2021-0018253 (KR), filed on Feb. 9, 2021.
Prior Publication US 2022/0255291 A1, Aug. 11, 2022
Int. Cl. H01S 5/024 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/0625 (2006.01); H01S 5/125 (2006.01)
CPC H01S 5/02461 (2013.01) [H01S 5/0203 (2013.01); H01S 5/0207 (2013.01); H01S 5/024 (2013.01); H01S 5/0261 (2013.01); H01S 5/0268 (2013.01); H01S 5/06256 (2013.01); H01S 5/125 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A laser diode comprising:
a substrate including an active region, a phase shift region adjacent to the active region, and a DBR region adjacent to the phase shift region and having a channel hole;
a lower clad layer disposed on the substrate;
an optical waveguide disposed on the lower clad layer and extending from the active region to the DBR region;
an upper clad layer disposed on the optical waveguide and the lower clad layer;
a lower insulation layer disposed on the lower clad layer, the upper clad layer, and the substrate of the phase shift region and the DBR region;
an upper insulation layer disposed on the lower insulation layer;
upper electrodes disposed on the upper insulation layer; and
a heat blocking layer disposed between the upper insulation layer and the lower insulation layer outside the lower clad layer, the optical waveguide, and the upper clad layer, the heat blocking layer disposed in the channel hole to thermally separate the optical waveguide from the substrate.