US 12,224,550 B2
Wafer level analysis for VCSEL screening
Tali Septon, Haifa (IL); Itshak Kalifa, Bat-Yam (IL); Elad Mentovich, Tel Aviv (IL); Matan Galanty, Korzim (IL); Yaakov Gridish, Yoqneam Ilit (IL); Hanan Shumacher, Kohav Yair (IL); Vadim Balakhovski, Herzliya (IL); and Juan Jose Vegas Olmos, Solrød Strand (DK)
Assigned to MELLANOX TECHNOLOGIES, LTD., Yokneam (IL)
Filed by MELLANOX TECHNOLOGIES, LTD., Yokneam (IL)
Filed on Jan. 25, 2021, as Appl. No. 17/156,902.
Prior Publication US 2022/0239056 A1, Jul. 28, 2022
Int. Cl. H01S 5/00 (2006.01)
CPC H01S 5/0042 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method for binning Vertical-Cavity Surface-Emitting Lasers (VCSELs) having individual performance characteristics on a wafer, the method comprising:
measuring, for each VCSEL on the wafer, two or more VCSEL parameters responsive to Direct Current (DC) or small signal measurement values;
correlating, for each VCSEL on the wafer, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the correlation is indicative of a property of a VCSEL without directly measuring the property;
identifying clusters of VCSELs on the wafer having similar values of the common performance characteristic; and
screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.