| CPC H01M 4/48 (2013.01) [H01M 4/0428 (2013.01); H01M 4/364 (2013.01); H01M 4/38 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01)] | 17 Claims | 

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               1. A silicon-oxygen composite having a chemical formula of SiOx, in which 0<x<2; 
            sulfur element having a content of 20 ppm-600 ppm; and 
                manganese element having a content from 5 ppm to 300 ppm, 
                wherein a mass ratio of the sulfur element to the manganese element is from 1.5 to 10.0, 
                wherein an X-ray diffraction pattern of the silicon-oxygen composite has: 
              a first diffraction peak at a position where the diffraction angle 2θ is 26°-30°, wherein the full width at half maxima of the first diffraction peak is 0.8°-3.2°; 
                  a second diffraction peak at a position where the diffraction angle 2θ is 46°-50°, wherein the full width at half maxima of the second diffraction peak is 1.0°-4.2°; and 
                  a third diffraction peak at a position where the diffraction angle 2θ is 54°-58°, wherein the full width at half maxima of the third diffraction peak is 0.8°-4.5° wherein a content of the manganese element is from 5 ppm to 300 ppm. 
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