CPC H01L 33/60 (2013.01) [H01L 33/145 (2013.01); H01L 33/382 (2013.01); H01L 33/10 (2013.01)] | 14 Claims |
1. A light-emitting element comprising:
a semiconductor layered structure comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer;
a reflective portion comprising an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer made of an insulative material located on the second layer, wherein a width of the second layer is less than a width of the third layer in a cross-sectional view, and an end portion of the third layer is in contact with a surface of the first layer that is not covered by the second layer;
an insulative layer covering the reflective portion;
a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer;
a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion;
a second electrode located on the second semiconductor layer; and
an insulative portion located between the second electrode and the second semiconductor layer; wherein:
the insulative portion is in contact with the second electrode and the second semiconductor layer at a region below the second electrode; and
a thickness of the reflective portion is greater than a thickness of the insulative portion.
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