US 12,224,379 B2
Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip
Felix Feix, Jena (DE); Ines Pietzonka, Donaustauf (DE); and Petrus Sundgren, Lappersdorf (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/765,657
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Sep. 25, 2020, PCT No. PCT/EP2020/076869
§ 371(c)(1), (2) Date Mar. 31, 2022,
PCT Pub. No. WO2021/063819, PCT Pub. Date Apr. 8, 2021.
Claims priority of application No. 102019126506.1 (DE), filed on Oct. 1, 2019.
Prior Publication US 2022/0384680 A1, Dec. 1, 2022
Int. Cl. H01L 33/30 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01)
CPC H01L 33/30 (2013.01) [H01L 25/0753 (2013.01); H01L 33/0062 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for producing optoelectronic semiconductor chips, the method comprising:
A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence comprises an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers;
B) generating a structured masking layer;
C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region; and
D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from
[(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o<a≤0.2,
wherein the method is performed in the cited order, and
wherein the at least one intermixing region is formed to comprise an indirect band gap such that radiating and non-radiating recombinations in the at least one intermixing region are reduced.