US 12,224,378 B2
Epitaxial oxide materials, structures, and devices
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 10, 2023, as Appl. No. 18/167,365.
Application 18/167,365 is a continuation of application No. 17/653,828, filed on Mar. 7, 2022, granted, now 11,621,329.
Application 17/653,828 is a continuation of application No. PCT/IB2021/060413, filed on Nov. 10, 2021.
Prior Publication US 2023/0187506 A1, Jun. 15, 2023
Int. Cl. H01L 33/26 (2010.01); H01L 29/267 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/40 (2010.01); H01S 5/183 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC H01L 33/26 (2013.01) [H01L 29/267 (2013.01); H01L 33/002 (2013.01); H01L 33/005 (2013.01); H01L 33/04 (2013.01); H01L 33/40 (2013.01); H01S 5/3206 (2013.01); H01S 5/183 (2013.01); H01S 5/34 (2013.01); H01S 5/3425 (2013.01)] 42 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a substrate comprising a first in-plane lattice constant; and
a graded layer on the substrate, comprising a first epitaxial oxide material,
wherein the first epitaxial oxide material comprises a composition that varies in a growth direction such that the graded layer has the first in-plane lattice constant adjacent to the substrate and a second in-plane lattice constant at a surface of the graded layer opposite the substrate, and
wherein the first epitaxial oxide material comprises one of:
(AlxdGa1-xd)2(SizdGe1-zd)O5 wherein 0≤xd≤1 and 0≤zd≤1;
(AlxeGa1-xe)2LiO2 wherein 0≤xe≤1; and
(MgxfZn1-xf-yfNiyf)2GeO4 wherein 0≤xf≤1, 0≤yf≤1.