US 12,224,377 B2
Micro-sized face-up led device with micro-hole array and preparation method thereof
Hong Wang, Guangzhou (CN); Lijun Tan, Guangzhou (CN); Ruohe Yao, Guangzhou (CN); Kai Wang, Guangzhou (CN); and Zijing Xie, Guangzhou (CN)
Assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN); and ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong (CN)
Filed by SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN); and ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong (CN)
Filed on Mar. 16, 2022, as Appl. No. 17/695,873.
Application 17/695,873 is a continuation of application No. PCT/CN2020/124571, filed on Oct. 29, 2020.
Claims priority of application No. 202010746592.7 (CN), filed on Jul. 29, 2020.
Prior Publication US 2022/0209065 A1, Jun. 30, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A micro-sized face-up LED device with a micro-hole array, wherein the micro-sized face-up LED device with the micro-hole array is prepared based on a GaN-based epitaxial layer material and comprises a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer, the GaN-based epitaxial layer comprising a substrate, an N-GaN layer, a multiple quantum well layer (MQW), and a P-GaN layer; and the N-GaN layer comprising an etched exposed N-GaN layer and an etched formed N-GaN layer;
wherein an upper surface of the substrate is connected to a lower surface of the etched exposed N-GaN layer; a part of an upper surface of the etched exposed N-GaN layer is connected to the etched formed N-GaN layer and another part of the upper surface of the etched exposed N-GaN layer is connected to the N electrode; an upper surface of the etched formed N-GaN layer is connected to a lower surface of the multiple quantum well layer; an upper surface of the multiple quantum well layer is connected to a lower surface of the P-GaN layer; an upper surface of the P-GaN layer is connected to a lower surface of the current spreading layer, and the current spreading layer is disposed at a center of the upper surface of the P-GaN layer; an upper surface of the current spreading layer is connected to the P electrode, and the P electrode is disposed at a center of the upper surface of the current spreading layer; the passivation layer covers a whole device except the P electrode and the N electrode; the P-GaN layer, the multiple quantum well layer and the etched formed N-GaN layer from top to bottom constitute a Mesa, and the Mesa is prepared with micro-holes in partial regions from an edge of the Mesa to a center direction of the device,
wherein the P electrode is in a double ring shape with a straight line connecting two rings in a middle; the current spreading layer has a cylindrical structure with a bottom radius smaller than a bottom radius of the P-GaN layer, and the current spreading layer is a metal doped current spreading layer, including an ohmic contact layer disposed at a bottom of the current spreading layer and forms good ohmic contact with the P-GaN layer and a metal doped current transport layer; the N electrode is annular, an inner ring and an outer ring of the N electrode are round, and an inward and outward semicircular bulge is additionally arranged, and a diameter of the bulge is 5 μm to 15 μm; and the N electrode and the P electrode adopt a four-layer metal alloy composed of metals selected from Ni, Cr, Ti, Ag, Al and Au, with a thickness of 1 μm to 1.25 μm.