US 12,224,372 B2
Light-emitting diode chip
Benjie Fan, Xiamen (CN); Hung-Chih Yang, Xiamen (CN); and Shuen Ta Teng, Xiamen (CN)
Assigned to BRIDGELUX OPTOELECTRONICS (XIAMEN) CO., LTD., Xiamen (CN)
Filed by KAISTAR Lighting (Xiamen) Co., Ltd., Xiamen (CN)
Filed on Feb. 21, 2022, as Appl. No. 17/676,265.
Claims priority of application No. 202110219720.7 (CN), filed on Feb. 26, 2021.
Prior Publication US 2022/0278251 A1, Sep. 1, 2022
Int. Cl. H01L 33/04 (2010.01); H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/04 (2013.01) [H01L 25/0753 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/325 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A light-emitting diode chip, comprising:
a first doping-type semiconductor layer;
a second doping-type semiconductor layer; and
a MQW (multiple quantum well) structure layer, formed between the first doping-type semiconductor layer and the second doping-type semiconductor layer;
wherein the MQW structure layer comprises a plurality of first quantum well structures and at least one second quantum well structure stacked in a distance direction between the first doping-type semiconductor layer and the second doping-type semiconductor layer, the plurality of first quantum well structures are configured to emit first color light, the at least one second quantum well structure is configured to emit second color light different from the first color light, the plurality of first quantum well structures comprise: first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer, and a total number of well layer of the at least one second quantum well structure is 1/15 to ⅕ of a total number of well layer of the first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer in the plurality of first quantum well structures.