US 12,224,368 B1
Optoelectronic device including photodiode having buried layer with different thicknesses
Francesco Gramuglia, Augsburg (DE); Eng Huat Toh, Singapore (SG); and Ping Zheng, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed on May 16, 2024, as Appl. No. 18/666,787.
Int. Cl. H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/107 (2013.01) [H01L 31/035272 (2013.01); H01L 31/18 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate;
a first well of a first conductivity type in the substrate, the first well has a side boundary;
a second well of a second conductivity type in the substrate, the second conductivity type is of an opposite conductivity type to the first conductivity type, the first well is concentric with and laterally surrounded by the second well; and
a buried layer of the second conductivity type in the substrate, the buried layer is below the first well and the second well, the buried layer has a first section and a second section, the first section has a larger thickness than the second section, the first section is concentric with and laterally surrounded by the second section, wherein the first section of the buried layer is aligned vertically below and in direct contact with the first well, and wherein the first section of the buried layer has a side boundary, and the side boundary of the first section of the buried layer is coplanar with the side boundary of the first well.