US 12,224,367 B2
Solar cell, multi-junction solar cell, solar cell module, and solar power generation system
Soichiro Shibasaki, Nerima (JP); Mutsuki Yamazaki, Yokohama (JP); Naoyuki Nakagawa, Setagaya (JP); Sara Yoshio, Yokohama (JP); and Kazushige Yamamoto, Yokohama (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Minato-ku (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Minato-ku (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed on Feb. 28, 2019, as Appl. No. 16/288,932.
Claims priority of application No. 2018-175274 (JP), filed on Sep. 19, 2018; and application No. 2019-033073 (JP), filed on Feb. 26, 2019.
Prior Publication US 2020/0091365 A1, Mar. 19, 2020
Int. Cl. H01L 31/0725 (2012.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01); H01L 31/042 (2014.01); H02S 10/20 (2014.01)
CPC H01L 31/0725 (2013.01) [H01L 31/022425 (2013.01); H01L 31/032 (2013.01); H01L 31/042 (2013.01); H02S 10/20 (2014.12)] 12 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a substrate;
a first transparent electrode;
a second transparent electrode;
a p-type photoelectric conversion layer containing cuprous oxide disposed between the first transparent electrode and the second transparent electrode;
an n-type layer disposed between the p-type photoelectric conversion layer and the second transparent electrode, wherein
the p-type photoelectric conversion layer has a thickness of 500 nm or more and 0.3 mm or less,
at a temperature of 100 K or lower, the p-type photoelectric conversion layer has a photoluminescence spectrum exhibiting a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less and that is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A≤100B), and wherein
the p-type photoelectric conversion layer as analyzed by X-ray photoelectron spectroscopy,
in a peak of the cuprous oxide observed in a range in which a binding energy value is 930 eV or more and 934 eV or less,
exhibits a first intersection and a second intersection where a horizontal line passing through a value of ⅔ of a peak top of the cuprous oxide intersects with the peak of the cuprous oxide, and
exhibits a third intersection where a perpendicular line extending from the peak top to the horizontal line intersects with the horizontal line, wherein
an average of ratios of a difference between a first length formed by the first intersection and the third intersection and a second length formed by the second intersection and the third intersection is 15% or less,
the first electrode is formed over the substrate, and
the p-type photoelectric conversion layer is formed over the first electrode.