	US 12,224,363 B2
	Method for treating a stack obtained during the manufacture of a heterojunction photovoltaic cell
Jordi Veirman, Grenoble (FR); and Julie Stendera, Grenoble (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Appl. No. 17/629,648
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
PCT Filed Jul. 24, 2020, PCT No. PCT/EP2020/070914 § 371(c)(1), (2) Date Jan. 24, 2022, PCT Pub. No. WO2021/018757, PCT Pub. Date Feb. 4, 2021.
Claims priority of application No. 1908538 (FR), filed on Jul. 26, 2019.
Prior Publication US 2022/0246774 A1, Aug. 4, 2022
Int. Cl. H01L 31/0376 (2006.01); H01L 31/0747 (2012.01); H01L 31/20 (2006.01)

CPC H01L 31/03767 (2013.01) [H01L 31/0747 (2013.01); H01L 31/208 (2013.01)]

19 Claims

1. A method for treating a stack comprising a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, said method comprising exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 8 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 300 kW/m².