US 12,224,353 B2
Thin-film transistor circuit and method of manufacturing thin-film transistor circuit
Kazushige Takechi, Kanagawa (JP)
Assigned to Wuhan Tianma Micro-Electronics Co., Ltd., Wuhan (CN)
Filed by Wuhan Tianma Micro-Electronics Co., Ltd., Wuhan (CN)
Filed on Nov. 8, 2021, as Appl. No. 17/521,261.
Claims priority of application No. 2020-188268 (JP), filed on Nov. 11, 2020.
Prior Publication US 2022/0149202 A1, May 12, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10K 59/121 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02565 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/127 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/78675 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A circuit comprising:
a polysilicon thin-film transistor comprising:
a polysilicon layer;
a first conductor layer located above the polysilicon layer; and
a first insulator layer located between the first conductor layer and the polysilicon layer; and
an oxide semiconductor thin-film transistor comprising:
an oxide semiconductor layer;
a second conductor layer located above the oxide semiconductor layer; and
a second insulator layer located between the second conductor layer and the oxide semiconductor layer,
wherein the polysilicon layer includes a polysilicon part of the polysilicon thin-film transistor,
wherein the first conductor layer includes a first gate electrode part of the polysilicon thin-film transistor,
wherein the first insulator layer includes a first insulator part located between the first gate electrode part and the polysilicon part,
wherein the oxide semiconductor layer includes an oxide semiconductor part of the oxide semiconductor thin-film transistor,
wherein the second conductor layer includes a second gate electrode part of the oxide semiconductor thin-film transistor,
wherein the second insulator layer includes a second insulator part located between the second gate electrode part and the oxide semiconductor part,
wherein the second insulator layer has a relative permittivity of not less than 8,
wherein the entire area of the second insulator layer is covered with the second conductor layer,
wherein the first insulator layer has a relative permittivity lower than the relative permittivity of the second insulator layer,
wherein the second conductor layer includes an upper electrode part of a capacitive element, and
wherein the second insulator layer includes an insulator part of the capacitive element,
wherein the second conductor layer of the oxide semiconductor thin-film transistor is above of the upper electrode part of the capacitive element,
wherein the second insulator layer of the oxide semiconductor thin-film transistor is above of the insulator part of the capacitive element.