US 12,224,351 B2
Semiconductor device and method of manufacturing the same
Chao-Ching Cheng, Hsinchu (TW); Chun-Chieh Lu, Taipei (TW); Hung-Li Chiang, Taipei (TW); and Tzu-Chiang Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 13, 2023, as Appl. No. 18/352,230.
Application 17/571,561 is a division of application No. 16/578,389, filed on Sep. 22, 2019, granted, now 11,227,955, issued on Jan. 18, 2022.
Application 18/352,230 is a continuation of application No. 17/571,561, filed on Jan. 10, 2022, granted, now 11,757,045.
Prior Publication US 2023/0361217 A1, Nov. 9, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78675 (2013.01) [H01L 29/66757 (2013.01); H01L 29/78684 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first gate structure, disposed over a substrate;
a first semiconductor layer, disposed over the substrate, the first semiconductor layer being overlapped with the first gate structure; and
at least one first conductive element, disposed over the substrate and connected to the first semiconductor layer, a portion of the first semiconductor layer being between the first gate structure and the at least one first conductive element, wherein the at least one first conductive element comprises:
a first poly-material portion; and
a first metallic portion, in physical contact with at least one of an entire top surface and an entire sidewall of the first poly-material portion.